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| 品牌 | 梓冠 |
|---|
SOI芯片光电探测器阵列
SOI Chip-based Photodetector Array
SOI芯片式光电探测器阵列，该产品基于硅基锗-硅光电探测器，实现了多通道光电探测器的单片化集成，可片上集成光学混频器，芯片尺寸小，集成度高，偏振相关性小，模拟带宽大，可提供裸片或光电一体化封装产品方案。
Chip-based multi-channel photodetector array is a product based on Ge-Si SOI platform. This product achieved the integration of multi-channel photodetectors on a single SOI chip. The MMI-based optical hybrider/mixer could also be integrated on the chip. It is capable of tiny polarization sensitivity and large electrical bandwidth. Both the die products and chip package solutions are provided.
〖性能指标Specifications〗
| 参数指标 Parameters
| 单位 Unit | 最小值 Min. | 典型值 Typ.
| 最大值 Max. | 备注 Notes |
| 波长范围 Wavelength range | nm | 1530—1570 nm or 1270nm—1330 nm
| |||
| 暗电流 Dark current
| nA | 35 | 50 | ||
| 3 dB模拟带宽 3 dB bandwidth | GHz | 28 | |||
| 光饱和功率 Optical saturation power | mW | 10 | |||
| 响应度 Responsibility | A/W | 0.8 | 0.85 | ||
| 90度光学混频器损耗 90°mixer loss | dB | 6 | 6.5 | 6.7 | |
| 90度光学混频器相位失衡度 90°mixer phase unbalance | ° | 5 | |||
| 通道数 Number of channels | 8或可定制 8 or Can be customized | ||||
| 光纤接入损耗 Insertion loss | dB | ≤0.5 | |||
| 偏振相关损耗 PDL | dB | ≤0.3 | |||
| 工作温度范围 Operating temperature range | °C | -20 | 50 | ||
| 工作湿度范围 Operating humidity range | % | +65 | |||
| 芯片尺寸 Chip Dimensions | mm | 4(L)×5(W)×0.5(H) | |||
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